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Mimix Asia Launches 2.7 to 3.8 GHz GaAs MMIC 14W Power Amplifier
XP5002-BD Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry
January 14, 2010, Hsinchu, Taiwan - Mimix Asia, a supplier of monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave applications, introduces today a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002-BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications.
"The XP5002-BD provides a fully matched, high gain power amplifier solution," says Paul Beasly, Business Development Manager, Mimix Asia.
"The integrated bias circuitry, internal matching and superior gain performance provide an exceptionally compact solution for S-band high power applications."
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Mimix performs 100% RF and DC testing on the
XS1000-BD and samples are available today from
stock. The datasheet, additional product information
and technical support can be obtained from the
Mimix Asia website at www.mimixasia.com.
About Mimix Asia
Mimix Asia, a subsidiary of Mimix Broadband, Inc.,
designs and develops monolithic microwave integrated
circuits (MMICs) for microwave and millimeter-wave
applications. Mimix Asias unique product
offering includes multifunction and integrated
chips, high power amplifiers, attenuators and
phase shifters and provides complete chipset solutions
for military & commercial radar and satellite
communications systems. Mimix Asia also tests,
inspects and packages products and provides strategic
support to Mimix Broadband for production, supply
chain management, order processing and fulfillment.
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