Mimix Asia Introduces 14.5 to 16 GHz GaAs MMIC High Power Amplifier Delivering 5W Output Power

Dual Sided Bias Amplifier Achieves 27 dB Gain and +37 dBm Psat

April 29, 2009, Hsinchu, Taiwan - Mimix Asia introduces today a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications.

"The XP1058-BD is a 4-stage power amplifier with high gain in a single chip, providing 5W of saturated output power and giving customers an excellent solution for medium power Ku-Band applications," stated Peter J. Hales, Vice President Sales, Mimix Asia.

Mimix performs 100% RF testing on the XP1057-BD. Samples and production quantities are available in eight weeks. Technical support is also available from Mimix's applications engineers. The datasheet and additional product information can be obtained from the Mimix Asia website at www.mimixasia.com.

About Mimix Asia
Mimix Asia, a subsidiary of Mimix Broadband, Inc., designs and develops monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave applications. Mimix Asia’s unique product offering includes multifunction and integrated chips, high power amplifiers, attenuators and phase shifters and provides complete chipset solutions for military & commercial radar and satellite communications systems. Mimix Asia also tests, inspects and packages products and provides strategic support to Mimix Broadband for production, supply chain management, order processing and fulfillment.